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DECODE-Electronic Devices & Circuits

Himanshu Sharma ISBN-9789333216326
10% Discount
₹ 70.00
₹ 63.00
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UNIT I
Energy Bands and Charge Carrier in Semiconductor : Bonding forces and energy bands in solids, Charge Carriers in Semiconductors, Carrier Concentrations, Drift Mechanism.
Excess Carriers in Semiconductors : Optical Absorption, Carrier Lifetime : Direct Recombination, Steady State Carrier Generation, Quasi-Fermi Level, Diffusion of carriers and Einstein relation. (Chapter - 1)
UNIT II
Junctions : Equilibrium Conditions, Forward and Reverse Biased Junctions; Steady State Conditions.
Optoelectronic Devices : Photodiode V-I characteristic, Photodetector, Solar Cells, Light Emitting Diode. (Chapter - 2)
UNIT III
MOSFET : Device structure and its operation in equilibrium, V-I characteristics. Circuits at DC, MOSFET as Amplifier and switch, Biasing in MOS amplifier circuits, small-signal operation and models, single stage MOS amplifier, MOSFET internal capacitances and high frequency model, frequency response of CS amplifier (Chapter - 3)
UNIT IV
BJT : Review of device structure operation and V-I characteristics, BJT circuits at DC, BJT as amplifier and switch, biasing in BJT amplifier circuit, small-signal operation and models, single stage BJT amplifier, BJT internal capacitances and high frequency model, frequency response of CE amplifier. (Chapter - 4)
UNIT V
Feedback : The general feedback structure, properties of negative feedback, the four basic feedback topologies, the series-shunt feedback amplifier, the series-series feedback amplifier, the shunt-shunt and shunt series feedback amplifier.
Oscillators : Basic principles of sinusoidal oscillators, op-amp RC oscillator circuits, LC oscillator. (Chapter - 5)

 

UNIT I
Energy Bands and Charge Carrier in Semiconductor : Bonding forces and energy bands in solids, Charge Carriers in Semiconductors, Carrier Concentrations, Drift Mechanism.
Excess Carriers in Semiconductors : Optical Absorption, Carrier Lifetime : Direct Recombination, Steady State Carrier Generation, Quasi-Fermi Level, Diffusion of carriers and Einstein relation. (Chapter - 1)
UNIT II
Junctions : Equilibrium Conditions, Forward and Reverse Biased Junctions; Steady State Conditions.
Optoelectronic Devices : Photodiode V-I characteristic, Photodetector, Solar Cells, Light Emitting Diode. (Chapter - 2)
UNIT III
MOSFET : Device structure and its operation in equilibrium, V-I characteristics. Circuits at DC, MOSFET as Amplifier and switch, Biasing in MOS amplifier circuits, small-signal operation and models, single stage MOS amplifier, MOSFET internal capacitances and high frequency model, frequency response of CS amplifier (Chapter - 3)
UNIT IV
BJT : Review of device structure operation and V-I characteristics, BJT circuits at DC, BJT as amplifier and switch, biasing in BJT amplifier circuit, small-signal operation and models, single stage BJT amplifier, BJT internal capacitances and high frequency model, frequency response of CE amplifier. (Chapter - 4)
UNIT V
Feedback : The general feedback structure, properties of negative feedback, the four basic feedback topologies, the series-shunt feedback amplifier, the series-series feedback amplifier, the shunt-shunt and shunt series feedback amplifier.
Oscillators : Basic principles of sinusoidal oscillators, op-amp RC oscillator circuits, LC oscillator. (Chapter - 5)

 

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